Fundamentals of semiconductor devices

By:

Achuthan, M. K

Contributor(s):

Bhat, K N

Material type: Text

TextPublication details: New Delhi Mc Graw Hill education 2007Description: xvi, 724p. pbkISBN:

9780070612204

Subject(s):

DDC classification:

621.38152 ACH

Summary: Table of Content: PART I QUALITATIVE THEORY OF SEMICONDUCTORS, P-N JUNCTIONS AND P-N JUNCTION TRANSISTORS Chapter 1 Qualitative Semiconductor Theory Chapter 2 Qualitative Theory of PN Junction Transistors PART II QUANTITATIVE THEORY OF SEMICONDUCTORS, P-N JUNCTIONS, TRANSISTORS (BJTs AND FETs) AND TECHNOLOGY Chapter 3 Quantitative Semiconductor Theory Chapter 4 The PN Junction Under Forward nd Reverse Bias Chapter 5 Bipolar Junction Transistors D.C. and Low Frequency Properties Under Idealized Conditions Chapter 6 Junction Transition Capacitance and Junction Breakdown Voltages Chapter 7 Photo Diodes, Photo Transistors and PNPN Structures Basic Principles Chapter 8 A.C. Properties of Devices Chapter 9 High Frequency Analysis and High Frequency Equivalent Circuits, Using the Concepts of Complex Lifetime and Complex Stored C

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Holdings
Item type	Current library	Collection	Call number	Status	Date due	Barcode
Gratis Resources	Plaksha University Library	Engineering	621.38152 ACH (Browse shelf(Opens below))	Available		G000151

Table of Content: PART I QUALITATIVE THEORY OF SEMICONDUCTORS, P-N JUNCTIONS AND P-N JUNCTION TRANSISTORS Chapter 1 Qualitative Semiconductor Theory Chapter 2 Qualitative Theory of PN Junction Transistors PART II QUANTITATIVE THEORY OF SEMICONDUCTORS, P-N JUNCTIONS, TRANSISTORS (BJTs AND FETs) AND TECHNOLOGY Chapter 3 Quantitative Semiconductor Theory Chapter 4 The PN Junction Under Forward nd Reverse Bias Chapter 5 Bipolar Junction Transistors D.C. and Low Frequency Properties Under Idealized Conditions Chapter 6 Junction Transition Capacitance and Junction Breakdown Voltages Chapter 7 Photo Diodes, Photo Transistors and PNPN Structures Basic Principles Chapter 8 A.C. Properties of Devices Chapter 9 High Frequency Analysis and High Frequency Equivalent Circuits, Using the Concepts of Complex Lifetime and Complex Stored C

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